ISSI (Integrated Silicon Solution Inc.) DDR SDRAM

• Single supply voltage of 2.5V or 2.6V
• Standard double-data rate clock timing
• SSTL_2 compatible inputs
• Four internal banks with bank controls
• Data masking per byte on Write commands
• Programmable burst length of 2, 4, or 8
• Programmable CAS Latency of 2, 2.5 or 3
• Auto-Refresh Mode and Self-Refresh Mode
• Long-Term Support

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